High Breakdown ( > 1500 V ) AlGaN / GaN HEMTs by Substrate - Transfer Technology
نویسنده
چکیده
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ · cm has been achieved.
منابع مشابه
Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors Citation
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...
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